Noise Analysis on 28 nm High-k/Metal-Gate nMOSFETs
博士 === 國立清華大學 === 材料科學工程學系 === 101 === In this research, trap quantitative and qualitative properties in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (R...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07776337490385586150 |