High κ dielectric single crystal Gd2O3 on GaN and GaAs-based inversion-channel MOSFETs for ultimate CMOS
博士 === 國立清華大學 === 材料科學工程學系 === 101 === The quest for technologies beyond the 10 nm node CMOS has now driven efforts in fabricating inversion-channel III-V MOSFETs with high κ dielectrics, owing to the high electron mobility in GaAs-based materials. One of the most challenging issues for realizin...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/57619655416369399357 |