Interfacial Electrical Properties of MBE-Y2O3/GaAs MOS capacitors
碩士 === 國立清華大學 === 材料科學工程學系 === 101 === The scaling of Si-based MOSFETs is approaching limitation, GaAs has highly potential to be a candidate for n-channel MOSFETs. MBE-Y2O3 as gate dielectric on GaAs attracts our attention because of its high dielectric constant of ~16, relatively high band offse...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43961406293095296506 |