Electrical defect analysis of InxGa1-xAs MOS devices passivated by ALD and MBE high-k dielectrics
博士 === 國立清華大學 === 物理系 === 101 === Recent studies on MOS field-effect transistors (MOSFETs) using high-k dielectrics on InGaAs have become essential to high-speed low-power logic applications for keeping down scaling of complementary metal-oxide-semiconductor technologies. A well controlled high-k/In...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13089680859147424114 |