Interfacial Electrical Properties and Oxide Scaling Characteristics of In-situ ALD-Al2O3 on GaAs MOS Capacitor
碩士 === 國立清華大學 === 物理系 === 101 === Understanding the interfacial electronic characteristics of oxide/III-V and improving its electrical properties is one of the most critical issues for realizing the advanced III-V MOS devices. In this work, the growth of atomic-layer-deposition (ALD) onto fresh m...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24478820116006893704 |