The Fabrication and Analysis of High Frequency AlGaN/GaN HEMT and AlInN/GaN HEMT
碩士 === 國立清華大學 === 電子工程研究所 === 101 === In this thesis, we compare the DC and RF characteristics of AlGaN/GaN and AlInN/GaN HEMTs and their equivalent small signal signal circuit model are constructed and compared. For the DC characteristics the saturated current density(Idss) and the transconductance...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64732834284178885341 |