Study of Inversion mode and Junctionless Twin Thin-Film-Transistor Nonvolatile Memory
碩士 === 國立清華大學 === 工程與系統科學系 === 101 === This study proposed the n-channel and p-channel twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory (NVM) with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characterist...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73807685285606825977 |