Study of Fin-shaped Nanowires Tunneling-Field-Effect-Transistor Charge Trapping Nonvolatile Memory
碩士 === 國立清華大學 === 工程與系統科學系 === 101 === The Pi-gate polycrystalline silicon (poly-Si) nanowires tunneling field effect transistor (TFET) charge trapping(CT) nonvolatile memory (NVM) with all programming mechanisms and shows a large memory window and good reliability is demonstrated for the first t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21574027888647336316 |