Photolithography Linewidth Modification by Pre-Strained Substrate
碩士 === 國立清華大學 === 奈米工程與微系統研究所 === 101 === Currently, the industry of semiconductor uses double-pattering and immersion lithography technique to achieve 22 nm manufacturing process. But according to its fundamental optical and material characteristics limitation, this two manufacturing process will f...
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ndltd-TW-101NTHU57950212015-10-13T22:29:57Z http://ndltd.ncl.edu.tw/handle/56397003227068123111 Photolithography Linewidth Modification by Pre-Strained Substrate 預應變於微影製程中線寬調變上之應用 Yang, Chung-Yuan 楊仲元 碩士 國立清華大學 奈米工程與微系統研究所 101 Currently, the industry of semiconductor uses double-pattering and immersion lithography technique to achieve 22 nm manufacturing process. But according to its fundamental optical and material characteristics limitation, this two manufacturing process will face their bottleneck soon. In the same time, researchers put more focus on many kinds of soft devices. From this ground, this thesis presented a method that applying strain on flexible substrate then doing photolithography to reduce linewidth. The experiment results proved that pattern can be successively reduced without changing any lithography equipment and material which existing now. It could have 16.7% and 28.6% linewidth reducing respectively when applying 20% and 40% strain. Lo, Cheng-Yao 羅丞曜 2013 學位論文 ; thesis 76 zh-TW |
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碩士 === 國立清華大學 === 奈米工程與微系統研究所 === 101 === Currently, the industry of semiconductor uses double-pattering and immersion lithography technique to achieve 22 nm manufacturing process. But according to its fundamental optical and material characteristics limitation, this two manufacturing process will face their bottleneck soon. In the same time, researchers put more focus on many kinds of soft devices. From this ground, this thesis presented a method that applying strain on flexible substrate then doing photolithography to reduce linewidth. The experiment results proved that pattern can be successively reduced without changing any lithography equipment and material which existing now. It could have 16.7% and 28.6% linewidth reducing respectively when applying 20% and 40% strain.
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author2 |
Lo, Cheng-Yao |
author_facet |
Lo, Cheng-Yao Yang, Chung-Yuan 楊仲元 |
author |
Yang, Chung-Yuan 楊仲元 |
spellingShingle |
Yang, Chung-Yuan 楊仲元 Photolithography Linewidth Modification by Pre-Strained Substrate |
author_sort |
Yang, Chung-Yuan |
title |
Photolithography Linewidth Modification by Pre-Strained Substrate |
title_short |
Photolithography Linewidth Modification by Pre-Strained Substrate |
title_full |
Photolithography Linewidth Modification by Pre-Strained Substrate |
title_fullStr |
Photolithography Linewidth Modification by Pre-Strained Substrate |
title_full_unstemmed |
Photolithography Linewidth Modification by Pre-Strained Substrate |
title_sort |
photolithography linewidth modification by pre-strained substrate |
publishDate |
2013 |
url |
http://ndltd.ncl.edu.tw/handle/56397003227068123111 |
work_keys_str_mv |
AT yangchungyuan photolithographylinewidthmodificationbyprestrainedsubstrate AT yángzhòngyuán photolithographylinewidthmodificationbyprestrainedsubstrate AT yangchungyuan yùyīngbiànyúwēiyǐngzhìchéngzhōngxiànkuāndiàobiànshàngzhīyīngyòng AT yángzhòngyuán yùyīngbiànyúwēiyǐngzhìchéngzhōngxiànkuāndiàobiànshàngzhīyīngyòng |
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