Photoelectrochemical hydrogen generation study of InGaN films grown by Molecular beam epitaxy
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 101 === In this study, plasma-assisted molecular beam epitaxy (PA-MBE) growths of indium gallium nitride (InGaN) thin films on silicon substrate, with the films applied in photoelectrochemical hydrogen generation (PECHG), were carrier out. There are two parts. The fir...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95978108210259971634 |