Photoelectrochemical hydrogen generation study of InGaN films grown by Molecular beam epitaxy
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 101 === In this study, plasma-assisted molecular beam epitaxy (PA-MBE) growths of indium gallium nitride (InGaN) thin films on silicon substrate, with the films applied in photoelectrochemical hydrogen generation (PECHG), were carrier out. There are two parts. The fir...
Main Author: | 林逸霖 |
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Other Authors: | Jih-Shang Hwang |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/95978108210259971634 |
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