On the Polarization Induced Optical Properties of InGaN/GaN Nanorod Light Emitting Diode Arrays
博士 === 國立臺灣大學 === 光電工程學研究所 === 101 === Wide and direct band gap compound semiconductor material GaN has been studied extensively for the applications of solid state lighting. However, the low light-extraction efficiency is the bottleneck for high-power light-emitting diodes (LEDs). Moreover, the InG...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54081037093484337464 |