The effect of optical bandwidth of light-emitting transistors under different size layout design
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The invention of light-emitting transistors (LETs) in 2004 has revolutionized the concept of the carrier radiative recombination rate for the past 50 years. It is recognized that the radiative recombination lifetime of the traditional light-emitting diodes (L...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81075901939545039151 |