First-principles Study of Ge/GeO2 Interface and Bulk GeO2 and Calculation of Electron Mobility in SiGe FinFETs
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === Due to the aggressive scaling of CMOS technology, applying high mobility materials to channel of metal-oxide-semiconductor field-effect transistors (MOSFETs) is an important way to preserve the validity of Moore''s Law. Among all the choices,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65314294473854328457 |