Fabrication and Characterization of Resonant-Cavity Light-Emitting Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === This thesis presents the fabrication and characterization of resonant-cavity light emitting transistors (RCLETs). The base layer, which is the active layer, includes two undoped In0.2Ga0.8As quantum wells to enhance the base radiative recombination. With 35 pai...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30087204694444269499 |