The research of process and applications of nickel oxide by atomic layer deposition

• Main Authors: Heng-Wei Su, 蘇恒緯
• Other Authors: Feng-Yu Tsai
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/81660050251996351130

碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 101 === In recent years, nickel oxide has been intensively studied as a promising p-type semiconductor in wide range application. In this study, we utilized atomic layer deposition to prepare NiO thin films from Ni(amd) and H2O as precursors. From a variety of analysis, the crystalline structure, element composition, surface morphology, and optical property were studied to characterize the ALD NiO film. Furthermore, we demonstrated that the ALD NiO can be used in resistive switching random access memory (RRAM) and organic solar cell. The NiO showed the ability of bipolar switching with adequate LRS/HRS current ratio of 102. However, we found that the defect deficient ALD NiO had a poor operation stability. In addition, we used the ALD NiO as an anode interfacial layer to fabricate bulk heterojunction solar cell. The device performance indicated that ALD NiO could effectively transport holes while blocking the electron to reduce leakage current. Finally, we attempted to use NiO as p-channel materials of thin film transistors (TFT). However, the devices malfunction, which could be a result of the low hole concentration of ALD NiO. These results gave a further understanding of properties of ALD NiO and also demonstrated the ability for ALD NiO to be incorporated in various applications.