Application of atomic layer deposited Al-doped hafnium oxide for RRAM
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 101 === In this study, we used ALD to deposit the switching material of RRAM. RRAM has suffered from the randomness of conductive filaments which results in poor uniformity of resistive switching parameters. It has been proved that doping can overcome this problem,...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23590180036888581127 |