Two-State Trap-Assisted Tunneling Current Phenomenon in Al2O3/SiO2/4H-SiC Stacked Device
博士 === 國立臺灣大學 === 電子工程學研究所 === 101 === In this thesis, we explain the two-state trap-assisted tunneling current phenomenon in Al2O3/SiO2/4H-SiC stacked device. In the high-k/SiO2 stacked dielectric MOS capacitor, it is believed that the defects associated with the oxygen vacancies were formed during...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15893965589195004488 |