The effect of edge thinning structure on the performance of InAs/GaAs Quantum dot infrared photodetectors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 101 === Recently, the methods of promoting the operation temperature have attracted much attention. Experimental evidences have demonstrated that QDIPs exhibit improved properties by lowering the dark current. However, the main factors that determine the dark current a...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11210798860423931605 |