A Comprehensive Quantum-Mechanical Model for C-V and I-V Characteristics in Ultrathin MOS Structure and Experiment Verification
碩士 === 國立臺灣大學 === 電子工程學研究所 === 101 === This research is divided into two parts. In the first part, we derive a new statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semicon...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52397191534989324009 |