Channel Engineering of Tunneling-Field-Effect Poly-Si Thin-Film Transistors
碩士 === 國立臺灣科技大學 === 電子工程系 === 101 === In the progress of the electronics industry, the scale down of conventional metal oxide semiconductor thin film transistor (MOSFET) will emerge some reliability problems, such as short-channel effect, hot- carrier effect, drain-induce barrier lowering (DIBL) and...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71581049138535731102 |