Fabrication of chemical vapor deposited SiC film and its metal-insulation layer-semiconductor device
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 101 === In the thesis, the SiC films deposited on Si substrate prepared by chemical vapor deposition method were studied. The SiCl4 and CH4 sources were used as the precursors in the deposition process. Film deposition rate and morphology were studied. Under certain c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59759455389588160125 |