Performance Dependent on Width-to-Length Ratio of Strained SiGe Channel MOSFETs
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 101 === This thesis measures the n- and p-MOSFETs fabricated through 65 nm high k/metal gate CMOSFET process flow. The channels of the Si cap on SiGe were compared with Si-only channels. We found that biaxial compressive strain effect on device performance depends on...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12612657054974364320 |