The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension

• Main Authors: Li-Kung Chin, 秦禮功
• Other Authors: Wen-Kuan Yeh
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/28716612132540925184

碩士 === 國立高雄大學 === 電機工程學系碩士班 === 101 === A new structure called Fin Field-Effect Transistor (FinFET) is proposed to achieve continuous scaling down of MOSFET. In this thesis, the characteristic and reliability of FinFET are studied with different dimensions. It is found that the short channel effect enhanced with the decreasing of channel length under constant fin width. It caused the decreasing of the threshold voltage (VT), increasing the driving current (ID), however, the subthreshold swing (SS) also increased, and drain induced barrier lowing (DIBL) becomes most serious. The device with fin width of 10 nm and 25 nm, under constant channel length were studied. It is observed that the VT reduced for the device with 10 nm fin width due to the quantum effect. However, the reduction of mobility due to collision in the channel. The degradation of ID, SS and DIBL would also degrade. We use hot carrier effect to study the device reliability. After hot carrier stressed, the degradation of ID, VT, transconductance (Gm) are more serious for device with narrow fin width. It is also observed that the VT was reduced and ID increased as the positive body bias. However, SS is also increased and the obvious Gate-Induced Drain Leakage (GIDL) effect could be found. The effect is more serious for device with narrow fin width. The degradation of ID, VT, Gm are more serious for device with positive body bias after hot carrier stressed.