Investigation on AlN-ZnO Cosputtered Films for ZnODouble Heterojunction Light-Emitting Diode Application
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 101 === AlN-ZnO cosputtered films were made of radio-frequency magnetron cosputtering system by using target AlN and ZnO. Film crystallinity and optoelectronic properties after annealing at 700℃ for 30min under vacuum ambient were improved. The use of un-doped zinc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3rtvzn |