The Study of The Low Temperature Flip-Chip Package by Applying AlGeSn-Based Transient Liquid Phase Bonding Technique

• Main Authors: Chia-Chen Hsieh, 謝佳真
• Other Authors: Wen-Ray Chen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/em95pz

碩士 === 國立虎尾科技大學 === 電子工程系碩士班 === 101 === In this study, the films are proposed that can be apply for low-temperature flip chip package by transient liquid phase bonding as AlGeSn-base. The AlGe/Sn films are deposited by thermal evaporation. And then the sample is placed in the vacuum environment for thermocompression bonding. In this experiment, use to the different film thickness ratio of AlGe and Sn for 280oC~350oC bonding, TAlGe:TSn=1:1, 2:1, 3:1, respectively. To find the best parameters, graphically produced, LED flip chip package and electrical measurements, after shear stress testing, SEM, EDS, and XRD analysis. The results show, the AlGeSn film will have the dendritic structure on the surface and phase separation after bonding at 350oC. TAlGe:TSn= 2:1 after bond at 300oC and 350oC, TAlGe:TSn=3:1 after bond at 350oC for 60min with the best of the shear strength. The XRD analysis, the main diffraction peak is Sn(200), the relative intensity of Ge(111) is between 0.4 to 0.6,and Al(111) is between 0.1 to 0.2. In LED flip chip package, it have the high forward voltage for 4.49V, and increase the thickness to about 4.5μm, the forward voltage drop of 4.7% under 20mA.