Analytical Model to Study the Unclamped Inductive Switching Failure Analysis of an LDMOS
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 101 === Lateral double-diffused metal oxide semiconductor (LDMOS) transistors are widely used in smart power IC designs such as switching power supplies, drivers, amplifiers and automotive applications. To achieve a wide variety of high-voltage applications, LDMOS devic...
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| Format: | Others |
| Language: | en_US |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97225368407945084610 |