The Study of Improving High Voltage LIGBT Substrate Leakage Current
碩士 === 東海大學 === 電機工程學系 === 101 === This paper aims to the research of Lateral Insulated-Gate Bipolar Transistor (LIGBT) and proposes the design for the isolating method between the P-type substrate and N-epi layer. The junction between LIGBT’s P-type substrate and N-epi layer may have a large electr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64003631774008828709 |