Electrical Characteristics and Hot-Carrier Effect of Stacked High-k/Metal-Gate nMOSFETs under Nitridation Annealing Temperatures
碩士 === 國立臺北科技大學 === 機電整合研究所 === 101 === Since 45nm process generation and beyond, high-k/metal-gate (HK/MG) combining strain engineering technology for nano-scale MOSFETs incorporated into the conventional CMOS process is available and promising to increase the drive current. In the past, after gat...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qvz6gd |