The study of improving crystalline and dielectrics of HfO2 by a Cap-PDA method
碩士 === 國立雲林科技大學 === 電子工程系 === 101 === The study demonstrates a technique to fabricate higher-k HfO2 gate stacks by RF magnetic sputter system. First, HfO2 thin film is deposited on p-type Si(100) substrate, then a Ti-capping layer and a TiN gate electrode layer are deposited on HfO2 thin film. After...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35752896602906936148 |