Characteristics Research of InAs/GaAsSb Multi-Layer Quantum Dot with Rapid Thermal Annealing Proces

碩士 === 元智大學 === 光電工程學系 === 101 === This study presents an improvement of the optical properties of a vertically aligned InAs/GaAs(Sb) quantum dot (QD) structure and the extension of the carrier lifetime therein by rapid thermal annealing (RTA). The atomic force microscope (AFM) and scanning electron...

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Bibliographic Details
Main Authors: Fu-Hsiang Tsao, 曹福翔
Other Authors: Wei-Sheng Liu
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/66474230970389668999