Characteristics Research of InAs/GaAsSb Multi-Layer Quantum Dot with Rapid Thermal Annealing Proces
碩士 === 元智大學 === 光電工程學系 === 101 === This study presents an improvement of the optical properties of a vertically aligned InAs/GaAs(Sb) quantum dot (QD) structure and the extension of the carrier lifetime therein by rapid thermal annealing (RTA). The atomic force microscope (AFM) and scanning electron...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/66474230970389668999 |