Current Induced Effective Field in Ta(Nb)/CoFeB/MgO Heterostructures
碩士 === 國立中正大學 === 物理學系暨研究所 === 102 === In conventional magnetic random access memory (MRAM) the method of writing uses the magnetization switching. It was found recently when current goes through a magnetic hetero-structure an induced filed may be used for switching. In this thesis, we fabricated Ta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79067601487749477077 |