Study of Barrier Lowering of ZnO Schottky Nanodevices under UV Light Illumination
碩士 === 國立中正大學 === 光機電整合工程研究所 === 102 === The Schottky nanodevices have been known to possess the high sensitivity and fast response to UV light illumination, which is due to the lowering of the Schottky barrier height. This research conducts the systematic study to determine the barrier height lower...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x9ertj |