Epitaxial growth of AlGaN/GaN HEMT structures on Silicon Substrate by MOCVD
碩士 === 長庚大學 === 光電工程研究所 === 102 === In this work, we grown AlGaN/GaN HEMT (high electron mobility transistor) on silicon substrates by MOCVD (metal organic chemical vapor deposition). We used XRD and TEM to analyze structure to improve the crystal quality. Properties of the HEMT are governed by the...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90661508960945729651 |