Study of low temperature sputtered AlN thin film: characteristics and growth mechanism
碩士 === 中原大學 === 電子工程研究所 === 102 === Aluminum nitride (AlN) is a semiconductor material with direct band gap of 6.2 eV. It has been commonly used as a nucleation layer in the opto-semiconductor applications. Moreover, AlN is very attractive since it can be employed to fabricate deep-ultraviolet lig...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15994364628406486090 |