Study of Erase Characteristic in NOI Devices
博士 === 中原大學 === 電子工程研究所 === 102 === The promising use of non-overlapped implantation (NOI) nMOSFETs as non-volatile memory (NVM) devices has received considerable interest owing to their simple structure and compatibility with logic CMOS processing. In NOI nMOSFETs, the charge distribution by channe...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70595001076149737399 |