Impact of Imidization on Polyimide-based Nonvolatile Resistance Random Access Memories

碩士 === 逢甲大學 === 電子工程學系 === 102 === The proposed novel memories has been attracted attention and investigated for replacing the chief non-volatile memory, floating gate memory. Resistive Random Access Memory (ReRAM) with low power consumption, high operation speed, sample structure, and well scaling...

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Bibliographic Details
Main Authors: Chun_Min Ko, 柯俊民
Other Authors: Wen_Luh Yang
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/42989392822800022891