Impact of Imidization on Polyimide-based Nonvolatile Resistance Random Access Memories

• Main Authors: Chun_Min Ko, 柯俊民
• Other Authors: Wen_Luh Yang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/42989392822800022891

碩士 === 逢甲大學 === 電子工程學系 === 102 === The proposed novel memories has been attracted attention and investigated for replacing the chief non-volatile memory, floating gate memory. Resistive Random Access Memory (ReRAM) with low power consumption, high operation speed, sample structure, and well scaling is considered as the candidate for the next generation. Various materials is used as the resistive switching layer of ReRAM. In recent years, organic material is proposed to replace traditional inorganic material. The organic-based ReRAM is appropriate for flexible electronic device with low cost fabrication technology and the device characteristics can be modulated with multiple chemical synthesis. Therefore, the organic-based ReRAM is thought to be the one of most importance issue in the ReRAM area. In this study, a Al/DAXIN-PI/TaN structure ReRAM device was fabricated with the polyimide thin film is provided from the DAXIN company. The DAXIN-PI device shows excellent performance, including wider large memory window (Ron/Roff >108) and low operation energy (ca. 2.7×106Vm-1). Furthermore, we found that the macro-structure of PI thin film is modulated with thermal imidization temperature and operation voltage is increasing and high resistance state (HRS) leakage current is decreasing.