The study of VDMOSFET with SIPOS termination in various temperature measurements
碩士 === 華梵大學 === 電子工程學系碩士班 === 102 === For high power MOSFETs, in actually, the parallel junctions of devices are not infinite. However, the goal of termination design is to design the electric field of terminal close to that of parallel junction, let the potential redistribute and the electric field...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72633812841226089227 |