The Study on the Microstructure and Properties of In2O3:Cu, M (M=Mg, Ca, Sr) Thin Films

• Main Authors: Jia-Hao Jheng, 鄭嘉豪
• Other Authors: Guo-Ju Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/76426a

碩士 === 義守大學 === 材料科學與工程學系 === 102 === 　　In this study, the In2O3: Cu target was prepared by using grinding, calcination, embryo-pressurization, and sintering processes. Then the RF magnetron sputtering is employed to deposit the In2O3: Cu thin film on the (0001) sapphire substrates. By changing the annealing temperature and the concentrations of magnesium, calcium or strontium element, the crystallinity, microstructure, and optical as well as magnetic properties are thoroughly investigated. 　　From the experiment results, the In2O3:Cu thin film has the best optical properties and electrical properties after 30 minutes of annealing at temperature of 950℃. The resistivity reaches 2.598×10-2 (Ω•cm), and the transmittance coefficient is up to 92% in visible light. Its energy gap is about 3.73 (eV). 　　When the concentration of magnesium is 7at%, it has better optical and electrical properties. The transmittance coefficient is up to 96% in visible light, and the energy gap is about 3.69 (eV). The minimum resistivity is 5.3869×10-1 (Ω•cm). 　　When the concentration of calcium is 5at%, it has relatively better optical and electrical properties. Although the transmittance coefficient is only 87% in the visible light that is slightly worse than that of the 3at% sample, however, the resistivity is 8.1312 (Ω•cm), lower than the 3at% sample by about 3 ~ 4 orders of magnitude. The energy gap is about 3.66 (eV). 　　When the concentration of strontium is 3at%, it has relatively better optical properties. The transmittance coefficient is up to 96% in visible light, and the energy gap is about 3.68 (eV). However, the sample with concentration of 7at% has better electrical properties and the resistivity lowers down to 6.5036×10-2 (Ω•cm).