Device Isolation of Liquid Phase Oxidation on InGaAs/InAlAs Metamorphic High-Electron-Mobility Transistor
碩士 === 義守大學 === 電子工程學系 === 102 === The study demonstrated liquid phase oxidation (LPO) on device isolation of InGaAs/InAlAs metamorphic high-electron-mobility transistor (MHEMT). The fabrication of conventional field effect transistors exist a gate leakage current due to the gate metal contact over...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52m3p3 |