A Study on technology of metalization of high heat dispersion Al2O3 substrate
碩士 === 崑山科技大學 === 機械工程研究所 === 102 === In this project the directly bonding copper (DBC) technology will be used to metalized Al2O3 ceramic substrate. A solid-state reaction method will be used to grow a thin layer of cuprous oxide (Cu2O) on the surface of Cu foil by covered with a layer of copper ox...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/68489670701493603489 |
| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 102 === In this project the directly bonding copper (DBC) technology will be used to metalized Al2O3 ceramic substrate. A solid-state reaction method will be used to grow a thin layer of cuprous oxide (Cu2O) on the surface of Cu foil by covered with a layer of copper oxide (CuO) powder, which reacts with Cu under the N2 atmosphere.
The copper-containing cuprous oxide contact with oxidized aluminum nitride substrate and to execute the eutectic reaction. After eutectic reaction the copper will attach tightly on Al2O3 substrate. The strength and the structure of interface layer between copper and aluminum nitride will be observed. This project provides teachers and students a change to link the knowledge between company and school, and to train students in experimental design and analysis capabilities.
|
|---|