The Properties of Depositing AlN Thin Film on Molybdenum Electrodes

碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 102 === In this research, the (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering applied on Film Bulk Acoustic wave Resonator (FBAR). Aluminum and Molybdenum are the top and bottom electrodes. A shear wave can...

Full description

Bibliographic Details
Main Authors: Zi-Jie Xu, 徐子傑
Other Authors: Maw-Shung Lee
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/jmq247