The Properties of Depositing AlN Thin Film on Molybdenum Electrodes

• Main Authors: Zi-Jie Xu, 徐子傑
• Other Authors: Maw-Shung Lee
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/jmq247

碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 102 === In this research, the (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering applied on Film Bulk Acoustic wave Resonator (FBAR). Aluminum and Molybdenum are the top and bottom electrodes. A shear wave can be excited within AlN film and reflects from the surface boundaries of the AlN membrane.The FBAR structure exhibits resonant response,and the higher resonant frequency is caused from the thicker AlN film. The results show that the different Annealing temperature condition and FBAR were investigated by X-Ray diffraction (XRD), Profile meter, Structural equation modeling(SEM) and Vector Network Analyzer. Finally, the FBAR device has high resonant frequency which is 3.72 GHz and are suitable for making a sensor in this study.