Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method

碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In semiconductor manufacturing process, the material of heating source is usually made by aluminum metal with anodized surface treatment. However, HF gas that produced in the process will etch the aluminum material to lead to the poor uniformity of...

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Bibliographic Details
Main Authors: Chen, I-Fan, 陳奕帆
Other Authors: Tsai, Cheng- Hsien
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/26221829059023608622