| Summary: | 碩士 === 龍華科技大學 === 工程技術研究所 === 102 === Ceramic targets (TiO2-doped zinc oxide, TZO) with a mixture of ZnO powder (99.9% purity) and TiO2 powder (99.9% purity, the TiO2 content is approximately 2 wt%) were employed in our experiment as source materials under a pressure of 12 MPa in ambient atmosphere at room temperature, pressure holding time is 5 min. Using two stage sintered, the first from room temperature to 800 oC (heating rate 5 °C/min), and then sintered to 1200 oC (heating rate 2 °C/min), holding time is 8 hour. The result indicated that it was a successful experiment.
TZO thin films were deposited onto soda-lime glass substrates by means of the radio frequency (RF) magnetron sputtering process, with a TZO ceramic target. The effects of the deposition time (45, 50, 55, 60, 65, 70 min) and substrates temperature (100, 150, 200, 250, 300 °C) on the morphology and optoelectronic performances of TZO films were investigated. Further, the Ti buffer layer and annealing in a vacuum also were studied. The experimental results show that with Ti buffer and annealing treatment, the electrical resistivity of the TZO films was found to have decreased from 6.81×10-3 Ω-cm to 4.23×10-3 Ω-cm, the energy band gap increased from 3.28 eV to 3.30 eV, and the average optical transmittance, in the visible part of the spectrum, was approximately 85%.
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