Device Characteristics Analysis of a-IGZO Thin-Film Transistors by Adjusting Processing of Source-Drain Electrodes
碩士 === 明新科技大學 === 電子工程研究所 === 102 === The main ideasin this study are focused on the device characteristics analysis of a-IGZO thin film transistors (TFTs) by adjusting processes of source-drain (S/D) electrodes. First of all, depositing indium zinc oxide (IZO), indium tin oxide (ITO) and molybdenum...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74655844982118523043 |