Early Effect Exposing Performance of 28nm HK/MG pMOSFETs under PDA or DPN Nitridation Treatment
碩士 === 明新科技大學 === 電子工程研究所 === 102 === With the advancement of technology, the feature size of field-effect transistors coming from semiconductor manufacturing process technology has evolved from sub-micron to 28nm process generation or beyond. Following the Moore’s law, besides the reduction of proc...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42352509086727995648 |