A stress response study of MOSFET with S/D stressors

碩士 === 國立中興大學 === 光電工程研究所 === 102 === The stress response of S/D stressors to MOSFET is studied in this work. SolidWorks is first applied to drawing the transistor structural diagram; then, the ANSYS stress analysis simulator is utilized for simulating the 3D channel stress distribution of transisto...

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Bibliographic Details
Main Authors: Cheng-Yuan Tsai, 蔡政原
Other Authors: 張書通
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/93320597313217843195